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ECIL Graduate Engineer Trainee Exam Model Question Papers 2012

ECIL Written Questions based on Engineering subjects for upcoming GET Exam

1.The current I in the given network.

a) 1A b) 3A c) 5A d) 7A

2.For the Delta- Wye transformation in given figure, the value of the resistance R is.

a) 1/3 ohms b) 2/3 ohms c) 3/2 ohms d) 3 ohms

3.In the given network, the Thevenin’s equivalent as seen by the load resistance Rl is

a) V=10 V, R= 2ohms b) V=10V, R=3 ohms c) V=15V, R= 2ohms d) V=15V, R=3 ohms

4.The current I in a series R-L circuit with R=10 ohms and L=20mH is given by i=2sin500t A. If v is the voltage across the R-L combination then i

a) lags v by 45 degree b) is in-phase with v c) leads v by 45 d) lags v by 90

5.In thr given network, the mesh current I and the input impedance seen by the 50 V source, respectively, are

a) 125/13 A and 11/8 ohms b) 150/13 A and 13/8 ohms c) 150/13 A and 11/8 ohms d) 125/13 A and 13/8 ohms

6.A voltage sourcehaving a source impedance Z = R + jX can deliver maximum Average power to a load impedance Z, when

a) Z = R + jX b) Z = R c) Z = jX d) Z = R –jX

7.In the given circuit, the switch S is closed at t=0. Assuming that there is no initial Charge in the capacitor, the current i(t) for t>0 is

a) V/R e^ (-2t/RC) b) V/R e^ (-t/RC) c) V/2R e^ (-2t/RC) d) V/2R e^ (-t/RC)

8.For the circuit in given figure, if e(t) is a ramp signal, the steady state value of the Output voltage v(t) is

a) 0 b) LC c) R/L d) RC

9.For the series RLC circuit in given figure, if w=1000 rad/sec, then the current I (in Amperes) is

a) 2 ∟-15 b) 2 ∟15 c) √2∟-15 d) √2∟15

10.The Y-parameter matrix (mA/V) of the two-port given network is

a) [2 -1 -1 2] b) [2 1 -1 2] c) [1 -2 -1 2] d) [2 1 1 2]

11.The maximum number of trees of the given graph is

a) 16 b) 25 c) 100 d) 125

12.Given figure shows a graph and one of its trees. Corresponding to the tree, the group of branches that CAN NOT constitute a fundamental cut set is

a) 1,2,3 b) 1,4,6,8,3 c) 5,6,8,3 d) 4,6,7,3

13.The Y-parameter matrix of a network is given by Y=[1 1 -1 1] A/V. The Z11 parameter of the same network is

a) ½ ohms b) 1/√2 ohms c) 1 ohms d) 2 ohms

14.For the given circuit, the switch was kept closed for a long time before opening it at t=0. The voltage v(0+) is

a) -10 V b) -1 V c) 0V d) 10 V

15.The input impedance of a series RLC circuit operating at frequency W=√2w, w being the resonant frequency, is

a) R-j(wL/√2) ohms b) R+j(wL/√2) ohms c) R-j√2wL ohms d) R-j√2wL ohms

16.The threshold voltage V is negative for

a) an n-channel enhancement MOSFET b) an n-channel depletion MOSFET c) an p-channel depletion MOSFET d) an p-channel JFET

17.At a given temperature, a semiconductor with intrinsic carrier concentration ni= 10 ^ 16 / m^3 is doped with a donor dopant of concentration Nd = 10 ^ 26 /m^3. Temperature remaining the same, the hole concentration in the doped semiconductor is

a) 10 ^ 26 /m^3 b) 10 ^ 16 /m^3 c) 10 ^ 14 /m^3 d) 10 ^ 6 /m^3}

18.At room temperature, the diffusion and drift constants for holes in a P-type semiconductor were measured to be Dp = 10 cm^2/s and µp = 1200 cm^2/V-s, respectively. If the diffusion constant of electrons in an N-type semiconductor at the same temperature is Dn = 20 cm^2/s, the drift constant for electrons in it is (www.naukribuzz.com)

a) µn = 2400 cm^2/V-s b) µn = 1200 cm^2/V-s c) µn = 1000 cm^2/V-s d) µn = 600 cm^2/V-s

19.A common LED is made up of

a) intrinsic semiconductor b) direct semiconductor c) degenerate semiconductor d) indirect semiconductor

20.When operating as a voltage regulator, the breakdown in a Zener diode occurs due to the

a) tunneling effect b) avalanche breakdown c) impact ionization d) excess heating of the junction.

21.If the common base DC current gain of a BJT is 0.98, its common emitter DC current gain is

a) 51 b) 49 c) 1 d) 0.02

22.Negative resistance characteristics is exhibited by a

a) Zener diode b) Schottky diode c) photo diode d) Tunnel diode

23.Let En and Ep, respectively, represent the effective Fermi levels for electrons and holes during current conduction in a semiconductor. For lasing to occur in a P-N junction of band-gap energy 1.2 eV, (En – Ep) should be

a) greater than 1.2eV b) less than 1.2eV c) equal to 1.1eV d) equal to 0.7eV

24.In a P-well fabrication process, the substrate is

a) N-type semiconductor and is used to build P-channel MOSFET

b) P-type semiconductor and is used to build P-channel MOSFET

c) N-type semiconductor and is used to build N-channel MOSFET

d) P-type semiconductor and is used to build N-channel MOSFET

25.In a MOS capacitor with n-type silicon substrate, the Fermi potential ¢ = -0.41 V and the flat-band voltage Vfb = 0V. The value of the threshold voltage Vt is

a) -0.82 V b) -0.41 V c) 0.41 V d) 0.82

Refer given figure for question 26 and 27. Assume D1 and D2 to be ideal diodes.

26.Which one of the following statements is true?

a) Both D1 and D2 are ON.

b) Both D1 and D2 are OFF.

c) D1 is ON and D2 is OFF.

d) D2 is ON and D1 is OFF.

27.Values of Vo and I, respectively, are

a) 2V and 1.1 mA b) 0V and 0 mA c) -2V and 0.7 mA d) 4V and 1.3 mA

28.In a BJT CASCODE pair, a

a) common emitter follows a common base

b) common base follows a common collector

c) common collector follows a common base

d) common base follows a common emitter

29.Inside a 741 op-amp, the last functional block is a

a) differential amplifier b) level shifter c) class-A power amplifier d) class-AB power amplifier

30.For the MOSFET in the given circuit, the threshold voltage Vt = 0.5V, the process parameter KP = 150 µA/V^2 and W/L = 10. The values of Vd and Id, respectively, are

a) Vd = 4.5 V and Id = 1 mA

b) Vd = 4.5 V and Id = 0.5 mA

c) Vd = 4.8 V and Id = 0.4 mA

d) Vd = 6 V and Id = 0 mA

31.A negative feedback is applied to an amplifier with the feedback voltage proportional to the output current. This feedback increases the

a) input impedance of the amplifier b) output impedance of the amplifier c) distortion in the amplifier d) gain of the amplifier

32.The early effect in a BJT is modeled by the small signal parameter

a) r0 b) r∏ c) gm d) β

33.For a given filter order, which one of the following type of filters has the least amount of ripple both in pass-band and stop-band?

a) Chebyshev type I b) Bessel c) Chebyshev type II d) Elliptic

34.For a practical feedback circuit to have sustained oscillation, the most appropriate value of the loop gain T is

a) 1 b) -1 c) -1.02 d) 1.02

35.Assume the op-amps in given figure to be ideal. If the input signal vi is a sinusoid of 2V peak-to-peak and with zero DC component, the output signal vo is a (www.naukribuzz.com)

a) sine wave b) square wave c) pulse train d) triangular wave

36.In a common source amplifier, the mid-band voltage gain is 40 dB and the upper cutoff frequency is 150kHz. Assuming single pole approximation for the amplifier the unity gain frequency fT is

a) 6 MHz b) 15 MHz c) 150 MHz d) 1.5 GHz

37.An op-amp is ideal except for finite gain and CMRR. Given the open loop differential gain Ad=2000, CMRR = 1000, the input to the noninverting terminal is 5.002 V and the input to the inverting terminal is 4.999 V, the output voltage of the op-amp is

a) 14 V b) 24 V c) -6 V c) -8 V

38.The op-amp in the circuit in given figure has a non-zero DC offset. The steady state value of the output voltage Vo is

a) –RC dvs(t)/ dt b) – (1/RC)|vs(t)dt c) –V d) +V

39.For the circuit in given figure, if the value of the capacitor C is doubled, the duty-cycle of the output waveform Vo

a) increases by a factor of 2 b) increases by a factor of 1.44 c) remains constant d) decreases by a factor of 1.44

40.Assume the op-amp in the given circuit to be ideal. The value of the output voltage Vo is

a) 3.2 Vi b) 4 Vi c) 9 Vi d) 10 Vi (www.naukribuzz.com)

41.The complement of the Boolean expression F = (X + Y¯ + Z)(X¯ + Z¯)(X + Y) is

a) XYZ+XZ¯+Y¯Z b) X¯YZ¯+XZ+X¯Y¯ c) X¯YZ¯+XZ+YZ d) XYZ+X¯Y¯

42.The Boolean function F(A,B,C,D) = ∑(0,6,8,13,14) with don’t care conditions d(A,B,C,D) = ∑(2,4,10) can be simplified to

a) F = B¯D¯+CD¯+ABC¯ b) F = B¯D¯+CD¯+ABC¯D c) F = AB¯D¯+CD¯+ABC¯ d) F = B¯D¯+CD¯+ABCD

43.The Boolean function F = A¯D¯+B¯D can be realized by one of the following figures

44. For the multiplexer in given figure, the Boolean expression for the output Y is

a) A¯B¯+B¯C¯+AC b) AB¯+B¯C¯+AC¯ c) AB¯+B¯C+AC d) A¯B¯+B¯C+A¯C

45. Which one of the following is TRUE?

a) Both latch and flip-flop are edge triggered.

b) A latch is level triggered and a flip-flop is edge triggered.

c) A latch is edge triggered and a flip-flop is level triggered.

d) Both latch and flip-flop are level triggered.

46. In a schottky TTL gate, the Schottky diode

e) increases the propagation delay

f) increases the power consumption

g) prevents saturation of the output transistor

h) keeps the transistor in cutoff region

47. For which one of the following ultraviolet light is used to erase the stored contents

a) PROM b) EPROM c) EEPROM d) PLA (www.naukribuzz.com)

48. Which one of the following is NOT a synchronous counter

a) Johnson counter b) Ring counter c) Ripple counter d) Up-down counter

49. In 8085 microprocessor, the accumulator is a

a) 4 bit register b) 8 bit register c) 16 bit register d) 32 bit register

50. In the register indirect addressing mode of 8085 microprocessor, data is stored

a) at the address contained in the register pair

b) in the register pair

c) in the accumulator

d) in a fixed location of the memory

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**For More ECIL Question Papers - CLICK HERE**ECIL Written Questions based on Engineering subjects for upcoming GET Exam

1.The current I in the given network.

a) 1A b) 3A c) 5A d) 7A

2.For the Delta- Wye transformation in given figure, the value of the resistance R is.

a) 1/3 ohms b) 2/3 ohms c) 3/2 ohms d) 3 ohms

3.In the given network, the Thevenin’s equivalent as seen by the load resistance Rl is

a) V=10 V, R= 2ohms b) V=10V, R=3 ohms c) V=15V, R= 2ohms d) V=15V, R=3 ohms

4.The current I in a series R-L circuit with R=10 ohms and L=20mH is given by i=2sin500t A. If v is the voltage across the R-L combination then i

a) lags v by 45 degree b) is in-phase with v c) leads v by 45 d) lags v by 90

5.In thr given network, the mesh current I and the input impedance seen by the 50 V source, respectively, are

a) 125/13 A and 11/8 ohms b) 150/13 A and 13/8 ohms c) 150/13 A and 11/8 ohms d) 125/13 A and 13/8 ohms

6.A voltage sourcehaving a source impedance Z = R + jX can deliver maximum Average power to a load impedance Z, when

a) Z = R + jX b) Z = R c) Z = jX d) Z = R –jX

7.In the given circuit, the switch S is closed at t=0. Assuming that there is no initial Charge in the capacitor, the current i(t) for t>0 is

a) V/R e^ (-2t/RC) b) V/R e^ (-t/RC) c) V/2R e^ (-2t/RC) d) V/2R e^ (-t/RC)

8.For the circuit in given figure, if e(t) is a ramp signal, the steady state value of the Output voltage v(t) is

a) 0 b) LC c) R/L d) RC

9.For the series RLC circuit in given figure, if w=1000 rad/sec, then the current I (in Amperes) is

a) 2 ∟-15 b) 2 ∟15 c) √2∟-15 d) √2∟15

10.The Y-parameter matrix (mA/V) of the two-port given network is

a) [2 -1 -1 2] b) [2 1 -1 2] c) [1 -2 -1 2] d) [2 1 1 2]

11.The maximum number of trees of the given graph is

a) 16 b) 25 c) 100 d) 125

12.Given figure shows a graph and one of its trees. Corresponding to the tree, the group of branches that CAN NOT constitute a fundamental cut set is

a) 1,2,3 b) 1,4,6,8,3 c) 5,6,8,3 d) 4,6,7,3

13.The Y-parameter matrix of a network is given by Y=[1 1 -1 1] A/V. The Z11 parameter of the same network is

a) ½ ohms b) 1/√2 ohms c) 1 ohms d) 2 ohms

14.For the given circuit, the switch was kept closed for a long time before opening it at t=0. The voltage v(0+) is

a) -10 V b) -1 V c) 0V d) 10 V

15.The input impedance of a series RLC circuit operating at frequency W=√2w, w being the resonant frequency, is

a) R-j(wL/√2) ohms b) R+j(wL/√2) ohms c) R-j√2wL ohms d) R-j√2wL ohms

16.The threshold voltage V is negative for

a) an n-channel enhancement MOSFET b) an n-channel depletion MOSFET c) an p-channel depletion MOSFET d) an p-channel JFET

17.At a given temperature, a semiconductor with intrinsic carrier concentration ni= 10 ^ 16 / m^3 is doped with a donor dopant of concentration Nd = 10 ^ 26 /m^3. Temperature remaining the same, the hole concentration in the doped semiconductor is

a) 10 ^ 26 /m^3 b) 10 ^ 16 /m^3 c) 10 ^ 14 /m^3 d) 10 ^ 6 /m^3}

18.At room temperature, the diffusion and drift constants for holes in a P-type semiconductor were measured to be Dp = 10 cm^2/s and µp = 1200 cm^2/V-s, respectively. If the diffusion constant of electrons in an N-type semiconductor at the same temperature is Dn = 20 cm^2/s, the drift constant for electrons in it is (www.naukribuzz.com)

a) µn = 2400 cm^2/V-s b) µn = 1200 cm^2/V-s c) µn = 1000 cm^2/V-s d) µn = 600 cm^2/V-s

19.A common LED is made up of

a) intrinsic semiconductor b) direct semiconductor c) degenerate semiconductor d) indirect semiconductor

20.When operating as a voltage regulator, the breakdown in a Zener diode occurs due to the

a) tunneling effect b) avalanche breakdown c) impact ionization d) excess heating of the junction.

21.If the common base DC current gain of a BJT is 0.98, its common emitter DC current gain is

a) 51 b) 49 c) 1 d) 0.02

22.Negative resistance characteristics is exhibited by a

a) Zener diode b) Schottky diode c) photo diode d) Tunnel diode

23.Let En and Ep, respectively, represent the effective Fermi levels for electrons and holes during current conduction in a semiconductor. For lasing to occur in a P-N junction of band-gap energy 1.2 eV, (En – Ep) should be

a) greater than 1.2eV b) less than 1.2eV c) equal to 1.1eV d) equal to 0.7eV

24.In a P-well fabrication process, the substrate is

a) N-type semiconductor and is used to build P-channel MOSFET

b) P-type semiconductor and is used to build P-channel MOSFET

c) N-type semiconductor and is used to build N-channel MOSFET

d) P-type semiconductor and is used to build N-channel MOSFET

25.In a MOS capacitor with n-type silicon substrate, the Fermi potential ¢ = -0.41 V and the flat-band voltage Vfb = 0V. The value of the threshold voltage Vt is

a) -0.82 V b) -0.41 V c) 0.41 V d) 0.82

Refer given figure for question 26 and 27. Assume D1 and D2 to be ideal diodes.

26.Which one of the following statements is true?

a) Both D1 and D2 are ON.

b) Both D1 and D2 are OFF.

c) D1 is ON and D2 is OFF.

d) D2 is ON and D1 is OFF.

27.Values of Vo and I, respectively, are

a) 2V and 1.1 mA b) 0V and 0 mA c) -2V and 0.7 mA d) 4V and 1.3 mA

28.In a BJT CASCODE pair, a

a) common emitter follows a common base

b) common base follows a common collector

c) common collector follows a common base

d) common base follows a common emitter

29.Inside a 741 op-amp, the last functional block is a

a) differential amplifier b) level shifter c) class-A power amplifier d) class-AB power amplifier

30.For the MOSFET in the given circuit, the threshold voltage Vt = 0.5V, the process parameter KP = 150 µA/V^2 and W/L = 10. The values of Vd and Id, respectively, are

a) Vd = 4.5 V and Id = 1 mA

b) Vd = 4.5 V and Id = 0.5 mA

c) Vd = 4.8 V and Id = 0.4 mA

d) Vd = 6 V and Id = 0 mA

31.A negative feedback is applied to an amplifier with the feedback voltage proportional to the output current. This feedback increases the

a) input impedance of the amplifier b) output impedance of the amplifier c) distortion in the amplifier d) gain of the amplifier

32.The early effect in a BJT is modeled by the small signal parameter

a) r0 b) r∏ c) gm d) β

33.For a given filter order, which one of the following type of filters has the least amount of ripple both in pass-band and stop-band?

a) Chebyshev type I b) Bessel c) Chebyshev type II d) Elliptic

34.For a practical feedback circuit to have sustained oscillation, the most appropriate value of the loop gain T is

a) 1 b) -1 c) -1.02 d) 1.02

35.Assume the op-amps in given figure to be ideal. If the input signal vi is a sinusoid of 2V peak-to-peak and with zero DC component, the output signal vo is a (www.naukribuzz.com)

a) sine wave b) square wave c) pulse train d) triangular wave

36.In a common source amplifier, the mid-band voltage gain is 40 dB and the upper cutoff frequency is 150kHz. Assuming single pole approximation for the amplifier the unity gain frequency fT is

a) 6 MHz b) 15 MHz c) 150 MHz d) 1.5 GHz

37.An op-amp is ideal except for finite gain and CMRR. Given the open loop differential gain Ad=2000, CMRR = 1000, the input to the noninverting terminal is 5.002 V and the input to the inverting terminal is 4.999 V, the output voltage of the op-amp is

a) 14 V b) 24 V c) -6 V c) -8 V

38.The op-amp in the circuit in given figure has a non-zero DC offset. The steady state value of the output voltage Vo is

a) –RC dvs(t)/ dt b) – (1/RC)|vs(t)dt c) –V d) +V

39.For the circuit in given figure, if the value of the capacitor C is doubled, the duty-cycle of the output waveform Vo

a) increases by a factor of 2 b) increases by a factor of 1.44 c) remains constant d) decreases by a factor of 1.44

40.Assume the op-amp in the given circuit to be ideal. The value of the output voltage Vo is

a) 3.2 Vi b) 4 Vi c) 9 Vi d) 10 Vi (www.naukribuzz.com)

41.The complement of the Boolean expression F = (X + Y¯ + Z)(X¯ + Z¯)(X + Y) is

a) XYZ+XZ¯+Y¯Z b) X¯YZ¯+XZ+X¯Y¯ c) X¯YZ¯+XZ+YZ d) XYZ+X¯Y¯

42.The Boolean function F(A,B,C,D) = ∑(0,6,8,13,14) with don’t care conditions d(A,B,C,D) = ∑(2,4,10) can be simplified to

a) F = B¯D¯+CD¯+ABC¯ b) F = B¯D¯+CD¯+ABC¯D c) F = AB¯D¯+CD¯+ABC¯ d) F = B¯D¯+CD¯+ABCD

43.The Boolean function F = A¯D¯+B¯D can be realized by one of the following figures

44. For the multiplexer in given figure, the Boolean expression for the output Y is

a) A¯B¯+B¯C¯+AC b) AB¯+B¯C¯+AC¯ c) AB¯+B¯C+AC d) A¯B¯+B¯C+A¯C

45. Which one of the following is TRUE?

a) Both latch and flip-flop are edge triggered.

b) A latch is level triggered and a flip-flop is edge triggered.

c) A latch is edge triggered and a flip-flop is level triggered.

d) Both latch and flip-flop are level triggered.

46. In a schottky TTL gate, the Schottky diode

e) increases the propagation delay

f) increases the power consumption

g) prevents saturation of the output transistor

h) keeps the transistor in cutoff region

47. For which one of the following ultraviolet light is used to erase the stored contents

a) PROM b) EPROM c) EEPROM d) PLA (www.naukribuzz.com)

48. Which one of the following is NOT a synchronous counter

a) Johnson counter b) Ring counter c) Ripple counter d) Up-down counter

49. In 8085 microprocessor, the accumulator is a

a) 4 bit register b) 8 bit register c) 16 bit register d) 32 bit register

50. In the register indirect addressing mode of 8085 microprocessor, data is stored

a) at the address contained in the register pair

b) in the register pair

c) in the accumulator

d) in a fixed location of the memory

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